IRFR/U3709ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient –––
22
––– mV/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
–––
–––
5.2
6.5
6.5
8.2
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
VGS(th)
Gate Threshold Voltage
1.35 1.80 2.25
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
51
-5.6
–––
–––
–––
–––
–––
17
––– mV/°C
1.0
150
100
-100
–––
26
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
nA VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS = -20V
gfs
S
VDS = 15V, ID = 12A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
4.7
1.6
5.7
5.0
7.3
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
nC VGS = 4.5V
ID = 12A
Gate Charge Overdrive
See Fig. 16
Switch Charge (Qgs2 + Qgd)
Output Charge
nC VDS = 16V, VGS = 0V
Turn-On Delay Time
Rise Time
12
VDD = 16V, VGS = 4.5V
12
ID = 12A
td(off)
tf
Turn-Off Delay Time
Fall Time
15
ns Clamped Inductive Load
3.9
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2330 –––
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
–––
–––
460
230
–––
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
100
12
Units
mJ
A
EAS
IAR
Avalanche Current
Repetitive Avalanche Energy
EAR
7.9
mJ
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
86
IS
D
–––
–––
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
340
integral reverse
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
29
1.0
44
37
V
T = 25°C, I = 12A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 12A, VDD = 15V
J F
Qrr
ton
di/dt = 100A/µs
25
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.kersemi.com
KERSEMI [ Kersemi Electronic Co., Ltd. ]
