IRFR/U3707ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
–––
–––
7.5
10
9.5
V
GS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
12.5
VGS(th)
Gate Threshold Voltage
1.35 1.80 2.25
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
71
-5.0
–––
–––
–––
–––
–––
9.6
2.6
0.90
3.5
2.6
4.4
5.8
8.0
11
––– mV/°C
1.0
150
100
-100
–––
14
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
gfs
S
VDS = 15V, ID = 12A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
nC VGS = 4.5V
ID = 12A
Gate Charge Overdrive
See Fig. 16
Switch Charge (Qgs2 + Qgd)
Output Charge
nC VDS = 15V, VGS = 0V
VDD = 16V, VGS = 4.5V
ID = 12A
Turn-On Delay Time
Rise Time
td(off)
tf
Turn-Off Delay Time
Fall Time
12
ns Clamped Inductive Load
3.3
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1150 –––
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
–––
–––
260
120
–––
–––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
42
Units
mJ
A
EAS
IAR
Avalanche Current
12
Repetitive Avalanche Energy
EAR
5.0
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
56
D
IS
–––
–––
Continuous Source Current
(Body Diode)
A
showing the
G
ISM
–––
–––
220
integral reverse
Pulsed Source Current
(Body Diode)
S
p-n junction diode.
VSD
trr
–––
–––
–––
–––
25
1.0
38
26
V
T = 25°C, I = 12A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 12A, VDD = 15V
J
F
Qrr
ton
di/dt = 100A/µs
17
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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