IRFR/U3704Z
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 12A
VGS, Gate-to-Source Voltage (V)
5.0
VDS= 18V
VDS= 10V
C, Capacitance(pF)
4.0
1000
Ciss
3.0
Coss
2.0
Crss
100
1
10
100
1.0
0.0
0
2
4
6
8
10
12
14
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
1.00
T J = 25°C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100µsec
1msec
10msec
100
VGS = 0V
0.10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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