IRFR/U3418PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12.0
ID= 18A
VGS , Gate-to-Source Voltage (V)
10.0
10000
VDS= 64V
VDS= 40V
VDS= 16V
C, Capacitance(pF)
Ciss
1000
8.0
6.0
Coss
Crss
100
4.0
2.0
10
1
10
100
0.0
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
100µsec
10
1msec
1
TC = 25°C
Tj = 175°C
Single Pulse
0.1
10msec
1.00
T J = 25°C
VGS = 0V
0.10
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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