IRFR/U3412
100000
VGS = 0V,
f = 1 MHZ
C iss
= C gs + Cgd ,
SHORTED
Crss = C gd
Coss = Cds + Cgd
20
VGS , Gate-to-Source Voltage (V)
C ds
ID= 29A
VDS = 80V
VDS= 50V
VDS= 20V
16
C, Capacitance (pF)
10000
12
Ciss
8
1000
Coss
Crss
100
1
10
100
4
0
0
20
40
60
80
100
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.0
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
10.0
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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