IRFR/U3411PbF
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 16A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
2000
Ciss
12
1500
8
1000
Coss
500
4
Crss
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
1
10
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
100
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
100
10
100µsec
1msec
T
J
= 25
°
C
1
1
T A = 25°C
T J = 175°C
Single Pulse
10msec
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
V
SD
,Source-to-Drain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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