IRFR320, IRFU320, SiHFR320, SiHFU320
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
RthJC
-
-
-
-
50
°C/W
Maximum Junction-to-Case (Drain)
3.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
400
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.51
-
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
4.0
100
25
250
1.8
-
VGS
=
20 V
-
nA
VDS = 400 V, VGS = 0 V
-
-
Zero Gate Voltage Drain Current
IDSS
µA
VDS = 320 V, VGS = 0 V, TJ = 125 °C
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = 10 V
ID = 1.9 Ab
-
Ω
VDS = 50 V, ID = 1.9 A
1.7
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
350
120
47
-
-
-
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
pF
nC
-
20
3.3
11
-
ID = 3.3 A, VDS = 320 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
-
10
14
30
13
-
VDD = 200 V, ID = 3.3 A,
ns
RG = 18 Ω, RD = 56 Ω, see fig. 10b
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
6 mm (0.25") from
package and center of
die contact
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
D
MOSFET symbol
showing the
integral reverse
p - n junction diode
IS
-
-
-
-
3.1
12
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 3.1 A, VGS = 0 Vb
-
-
-
-
1.6
600
3.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
270
1.4
ns
µC
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/µsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.kersemi.com
2