AUIRFR2905Z
Features
l
l
l
l
l
l
l
D
V
(BR)DSS
55V
11.1mΩ
14.5mΩ
59A
k
42A
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
R
DS(on)
typ.
G
S
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Description
D-Pak
AUIRFR2905Z
G
D
S
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure
to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
Max.
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy(Thermally limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Ã
h
d
g
59
42
42
240
110
0.72
± 20
55
82
See Fig.12a, 12b, 15, 16
-55 to + 175
k
k
Units
A
W
W/°C
V
mJ
A
mJ
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
j
Parameter
Typ.
Max.
1.38
50
110
Units
°C/W
i
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www.kersemi.com
1
07/20/10
KERSEMI [ Kersemi Electronic Co., Ltd. ]
