PD - 95953
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
l
IRFR2607ZPbF
IRFU2607ZPbF
HEXFET
®
Power MOSFET
D
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
V
DSS
= 75V
R
DS(on)
= 22mΩ
G
S
Specifically designed for Automotive applications,
this HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
I
D
= 42A
D-Pak
IRFR2607Z
Max.
45
32
42
180
110
0.72
± 20
I-Pak
IRFU2607Z
Units
A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Power Dissipation
V
GS
Linear Derating Factor
Gate-to-Source Voltage
W
W/°C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Avalanche Current
d
Ã
h
96
96
See Fig.12a, 12b, 15, 16
-55 to + 175
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
y
y
j
Parameter
Typ.
Max.
1.38
40
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
ij
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www.kersemi.com
1
12/21/04
KERSEMI [ Kersemi Electronic Co., Ltd. ]
