AUIRFR2307Z
500
15V
EAS, Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
400
I D
TOP
3.4A
4.6A
BOTTOM
32A
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
300
A
0.01
Ω
200
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
10 V
Q
GS
V
G
Q
GD
VGS(th) Gate threshold Voltage (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 100µA
Charge
Fig 13a.
Basic Gate Charge Waveform
L
0
DUT
1K
VCC
TJ , Temperature ( °C )
www.kersemi.com
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage vs. Temperature
7
KERSEMI [ Kersemi Electronic Co., Ltd. ]
