IRFR224, IRFU224, SiHFR224, SiHFU224
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
- 55 to + 150
260d
UNIT
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V; starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 3.8 A (see fig. 12).
c. ISD ≤ 3.8 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
50
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Case
RthJA
RthJC
-
-
110
3.0
Note
a. When mounted on 1" square PCB ( FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
250
-
-
V
V/°C
V
V
DS Temperature Coefficient
-
0.36
-
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
4.0
100
25
250
1.1
-
VGS
VDS = 250 V, VGS = 0 V
DS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 2.3 Ab
=
20 V
-
nA
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
VDS = 50 V, ID = 2.3 Ab
1.5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
260
77
15
-
-
VGS = 0 V,
VDS = 25 V,
-
-
pF
nC
f = 1.0 MHz, see fig. 5c
14
2.7
7.8
-
ID = 4.4 A, VDS = 200 V,
see fig. 6 and 13b, c
Qgs
Qgd
td(on)
tr
V
GS = 10 V
-
-
7.0
13
20
12
-
VDD = 125 V, ID = 4.4 A,
ns
RG = 18 Ω, RD = 28 Ω,
Turn-Off Delay Time
Fall Time
td(off)
tf
-
see fig. 10b, c
-
D
Between lead,
Internal Drain Inductance
Internal Source Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
S
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