IRFR/U12N25DPbF
12
10
7
10000
D
I
= 8.4A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 200V
= 125V
= 50V
C
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
100
10
Ciss
5
Coss
Crss
2
0
0
5
10
15
20
25
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
T
= 175°C
J
LIMITED BY R
(on)
DS
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
10msec
1000
GS
0.1
0.10
1
10
100
0.0
1.0
2.0
3.0
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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