IRFR/U3505
1000
TOP
V
GS
1000
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
V
GS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
10
10
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
70
G fs , Forward Transconductance (S)
ID, Drain-to-Source Current
(Α
)
T J = 25°C
T J = 175°C
60
50
40
30
20
10
0
T J = 25°C
100
T J = 175°C
10
VDS = 25V
1
4.0
5.0
6.0
20µs PULSE WIDTH
7.0
8.0
9.0
10.0
VDS = 25V
20µs PULSE WIDTH
0
10
20
30
40
50
60
70
80
90
VGS , Gate-to-Source Voltage (V)
ID,Drain-to-Source Current (A)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
