IRFR/U3505PbF
4000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, Cds SHORTED
gs
Crss = C
gd
Coss
= Cds + Cgd
20
ID= 30A
VGS , Gate-to-Source Voltage (V)
16
3000
C, Capacitance (pF)
VDS= 44V
VDS= 28V
VDS= 11V
12
2000
Ciss
8
1000
Coss
4
Crss
0
1
10
100
0
0
20
40
60
80
100
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100.0
T J = 175°C
10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
1.0
T J = 25°C
VGS = 0V
1msec
10msec
100
1000
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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