IRFR/U2407
20
4000
I
D
= 25A
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd , C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
16
3000
C, Capacitance(pF)
Ciss
2000
12
8
1000
Coss
Crss
0
1
10
100
4
0
0
20
40
60
FOR TEST CIRCUIT
SEE FIGURE 13
80
100
120
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
100
I
D
, Drain Current (A)
100
10us
T
J
= 175
°
C
100us
10
1ms
10
T
J
= 25
°
C
1
0.4
V
GS
= 0 V
0.8
1.2
1.6
2.0
2.4
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.kersemi.com
KERSEMI [ Kersemi Electronic Co., Ltd. ]
