IRFR/U2307ZPbF
EAS, Single Pulse Avalanche Energy (mJ)
15V
500
VDS
L
DRIVER
400
3.4A
4.6A
BOTTOM
32A
TOP
ID
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
300
A
0.01
Ω
200
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
100
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
10 V
Q
GS
Q
GD
VGS(th) Gate threshold Voltage (V)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-75
-50
-25
0
25
50
75
V
G
ID = 1.0A
ID = 1.0mA
ID = 250µA
ID = 100µA
Charge
Fig 13a.
Basic Gate Charge Waveform
L
0
DUT
1K
VCC
100 125 150 175
TJ , Temperature ( °C )
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage vs. Temperature
6
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