IRFR/U1010Z
5000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 42A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 44V
DS
C
C
= C
rss
oss
gd
4000
3000
2000
1000
0
VDS= 28V
VDS= 11V
= C + C
ds
gd
C
iss
4
C
C
oss
rss
0
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000.00
100.00
10.00
1.00
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
1msec
10msec
T
= 25°C
1
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
DC
GS
0.1
0.10
1
10
, Drain-toSource Voltage (V)
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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