IRF9530N
20
15
10
5
2000
1600
1200
800
400
0
I
D
= -8.4A
V
C
C
C
= 0V ,
f = 1M Hz
G S
iss
V
V
V
=-80V
=-50V
=-20V
DS
DS
DS
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
rss
oss
gd
C
iss
C
C
oss
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
10
20
30
40
50
60
1
10
100
Q
, Total Gate Charge (nC)
G
-V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
= 150°C
J
10us
T
= 25°C
J
100us
1ms
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
10ms
100
V
= 0V
G S
0.1
A
1
1
10
1000
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V , Drain-to-Source Voltage (V)
DS
-V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4 / 8
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