IRF830A, SiHF830A
Power MOSFET
FEATURES
500
V
GS
= 10 V
24
6.3
11
Single
D
www.kersemi.com
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
1.4
• Low Gate Charge Q
g
Results in Simple Drive
Available
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
RoHS*
COMPLIANT
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C
oss
Specified
• Lead (Pb)-free Available
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
S
G
D
S
N-Channel
MOSFET
• Uninterruptable Power Supply
• High Speed power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF830APbF
SiHF830A-E3
IRF830A
SiHF830A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
500
± 30
5.0
3.2
20
0.59
230
5.0
7.4
74
5.3
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 18 mH, R
G
= 25
Ω,
I
AS
= 5.0 A (see fig. 12).
c. I
SD
≤
5.0 A, dI/dt
≤
370 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
1
KERSEMI [ Kersemi Electronic Co., Ltd. ]
