Typical Characteristics
VGS
Top :
15.0 V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
101
101
Bottom: 5.0 V
150oC
100
100
25oC
-55oC
※
※
Notes :
Notes :
μ
1. V = 40V
1. 250 s Pulse Test
℃
DS μ
2. TC = 25
2. 250 s Pulse Test
-1
-1
10
10
-1
0
10
1
10
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
101
VGS = 10V
VGS = 20V
100
℃
150
℃
25
※
Notes :
1. V = 0V
2. 250 s Pulse Test
GS μ
※
℃
Note : T = 25
J
-1
10
0
6
12
18
24
30
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
2000
1500
1000
500
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = 50V
VDS = 125V
VDS = 200V
C
iss
C
6
oss
4
C
rss
※
Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※
Note: ID = 8.1 A
25
0
-1
1
10
10
100
0
5
10
15
20
30
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
