IRF1405
www.kersemi.com
1 5V
1200
VDS
L
D R IV E R
E
AS
, Single Pulse Avalanche Energy (mJ)
1000
ID
TOP
41A
71A
BOTTOM 101A
800
RG
20V
tp
D .U .T
IA
S
+
- VD D
A
600
0 .0 1
Ω
Fig 12a.
Unclamped Inductive Test Circuit
V
(B R )D SS
tp
400
200
0
25
50
75
100
125
150
175
Starting T
J
, Junction Temperature (
°
C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
10 V
Q
GS
V
G
VGS(th) , Variace ( V )
Q
GD
4.0
3.5
Charge
3.0
ID = 250µA
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.5
50KΩ
12V
.2µF
.3µF
2.0
+
V
-
DS
D.U.T.
V
GS
3mA
1.5
-75
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
I
G
I
D
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage Vs. Temperature
6
KERSEMI [ Kersemi Electronic Co., Ltd. ]
