IRF1010EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
60
–––
–––
2.0
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
12
mΩ V
GS
= 10V, I
D
= 50A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 50A
25
V
DS
= 60V, V
GS
= 0V
µA
250
V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
130
I
D
= 50A
28
nC
V
DS
= 48V
44
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 30V
–––
I
D
= 50A
ns
–––
R
G
= 3.6Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
4.5
–––
6mm (0.25in.)
nH
G
from package
7.5
–––
and center of die contact
3210 –––
V
GS
= 0V
690 –––
V
DS
= 25V
140 –––
pF
ƒ = 1.0MHz, See Fig. 5
1180
320 mJ I
AS
= 50A, L = 260µH
Typ.
–––
0.064
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
78
48
53
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 84
showing the
A
G
integral reverse
––– ––– 330
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
––– 73 110
ns
T
J
= 25°C, I
F
= 50A
––– 220 330
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 260µH
max. junction temperature. (See fig. 11)
operation outside rated limits.
R
G
= 25Ω, I
AS
= 50A, V
GS
=10V (See Figure 12)
This is a calculated value limited to T
J
= 175°C .
Calculated continuous current based on maximum allowable
I
SD
≤
50A, di/dt
≤
230A/µs, V
DD
≤
V
(BR)DSS
,
junction temperature. Package limitation current is 75A.
T
≤
175°C
J
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
2
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