FQP10N60C/FQPF10N60C
FQP10N60C/FQPF10N60C
600V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
• 9.5A, 600V, R
DS(on)
= 0.73Ω @V
GS
= 10 V
• Low gate charge ( typical 44 nC)
transistors are produced using Corise Semiconductorÿs proprietary,
• Low Crss ( typical 18 pF)
planar stripe, DMOS technology.
• Fast switching
This advanced technology has been especially tailored to
• 100% avalanche tested
minimize on-state resistance, provide superior switching
• Improved dv/dt capability
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
!
●
◀
▲
●
●
G
!
G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQP10N60C
9.5
3.3
38
FQPF10N60C
600
9.5 *
3.3 *
38 *
±
30
700
9.5
15.6
4.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
156
1.25
-55 to +150
300
50
0.4
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP10N60C
0.8
0.5
62.5
FQPF10N60C
2.5
--
62.5
Units
°C/W
°C/W
°C/W
KERSEMI [ Kersemi Electronic Co., Ltd. ]
