FQD2N60C / FQU2N60C N-Channel
QFET
®
MOSFET
FQD2N60C / FQU2N60C
N-Channel
QFET
®
MOSFET
600 V, 1.9 A, 4.7 Ω
Features
• 1.9 A, 600 V, R
DS(on)
= 4.7
Ω
(Max.)
@ V
GS
= 10 V,
I
D
= 0.95 A
• Low
Gate Charge
(Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100%
Avalanche Tested
•
RoHS Compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
G
S
G
D
D
!
●
S
◀
G
!
▲
●
●
D-PAK
I-PAK
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
Parameter
FQD2N60C / FQU2N60C
600
1.9
1.14
7.6
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case,
Max.
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient,
Max.
FQD2N60C / FQU2N60C
2.87
50
110
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
1
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KERSEMI [ Kersemi Electronic Co., Ltd. ]
