AUIRFR/U4104
20
ID= 42A
VGS, Gate-to-Source Voltage (V)
5000
4000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
16
VDS= 32V
VDS= 20V
C, Capacitance (pF)
3000
Ciss
12
2000
8
1000
Coss
Crss
4
0
1
10
100
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
1000
T J = 175°C
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
10msec
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
www.kersemi.com
5
KERSEMI [ Kersemi Electronic Co., Ltd. ]
