PD - 96344
AUTOMOTIVE GRADE
Features
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AUIRFR5410
HEXFET
®
Power MOSFET
D
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Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
R
DS(on)
max.
I
D
-100V
0.205
-13A
G
S
Description
Specifically designed for Automotive applications,
this Cellular Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other
applications.
D
S
D-Pak
AUIRFR5410
G
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
-13
-8.2
-52
66
0.53
± 20
194
-8.4
6.3
-5.0
-55 to + 150
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
c
d
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
c
e
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
R
JC
R
JA
R
JA
Junction-to-Case
gj
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
i
www.kersemi.com
1
12/06/10