AUIRFR2607Z 参数 Datasheet PDF下载

AUIRFR2607Z

Features

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Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

D

V

(BR)DSS

75V

17.6mΩ

22mΩ

45A

k

42A

R

DS(on)

typ.

G

S

max.

I

D (Silicon Limited)

I

D (Package Limited)

D

Description

Specifically designed for Automotive applications, this

HEXFET

®

Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide

variety of other applications.

D-Pak

AUIRFR2607Z

G

D

S

G

D

S

Absolute Maximum Ratings

Gate

Drain

Source

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

A

) is 25°C, unless otherwise specified.

I

D

@ T

C

= 25°C

I

D

@ T

C

= 100°C

I

D

@ T

C

= 25°C

I

DM

P

D

@T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

Continuous Drain Current, V

GS

@ 10V (Package Limited)

45

32

42

180

110

0.72

± 20

96

96

See Fig.12a, 12b, 15, 16

-55 to + 175

°C

300 (1.6mm from case )

10 lbf in (1.1N m)

k

A

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

V

GS

Gate-to-Source Voltage

E

AS

Single Pulse Avalanche Energy (Thermally limited)

E

AS

(Tested )

Single Pulse Avalanche Energy Tested Value

I

AR

Avalanche Current

E

AR

Repetitive Avalanche Energy

T

J

Operating Junction and

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter

R

θJC

Junction-to-Case

R

θJA

Junction-to-Ambient (PCB mount)

R

θJA

Junction-to-Ambient

™

Ù

h

d

W

W/°C

V

mJ

A

mJ

g

y

y

j

i

Typ.

–––

–––

–––

Max.

1.38

50

110

Units

°C/W

www.kersemi.com

1

08/24/10