SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
TIP41CF
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
Complementary to TIP42CF.
U
E
S
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25
Tc=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
100
100
5
6
A
10
O
L
L
M
T
UNIT
V
D
D
V
V
T
N
N
T
2
2
25
150
-55 150
A
W
W
1
2
Q
3
DIM
A
B
C
D
E
F
G
H
R
J
K
L
M
V
N
O
P
Q
R
H
S
T
U
V
MILLIMETERS
10.30 MAX
15.30 MAX
2.70 0.30
0.85 MAX
Φ3.20
0.20
3.00 0.30
12.30 MAX
0.75 MAX
13.60 0.50
3.90 MAX
1.20
1.30
2.54
4.50 0.20
6.80
2.60 0.20
10
25
5
0.5
2.60 0.15
F
G
J
1. BASE
K
B
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
SYMBOL
V
CEO(SUS)
I
CEO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
TEST CONDITION
I
C
=30mA, I
B
=0
V
CE
=60V, I
B
=0
V
CE
=100V, V
EB
=0
V
EB
=5V, I
C
=0
V
CE
=4V, I
C
=0.3A
V
CE
=4V, I
C
=3A
I
C
=6A, I
B
=600mA
V
CE
=4V, I
C
=6A
V
CE
=10V, I
C
=500mA
MIN.
100
-
-
-
30
15
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
0.7
400
1
-
75
1.5
2.0
-
V
V
MHz
UNIT
V
mA
A
mA
2002. 6. 25
Revision No : 0
P
2. COLLECTOR
3. EMITTER
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
