SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
A
TIP32CF
TRIPLE DIFFUSED PNP TRANSISTOR
C
・Complementary
to TIP31CF.
F
FEATURES
U
E
S
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Junction Temperature
Storage Temperature Range
Ta=25℃
Tc=25℃
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
-100
-100
-5
-3
-5
-1
2
25
150
-55�½�150
UNIT
V
V
V
K
T
L
L
M
D
D
N
T
N
T
A
O
Q
1
2
3
DIM MILLIMETERS
A
10.30 MAX
B
15.30 MAX
C
2.70±0.30
D
0.85 MAX
E
Φ3.20±0.20
F
3.00±0.30
12.30 MAX
G
0.75 MAX
R
H
13.60±0.50
J
K
3.90 MAX
L
1.20
1.30
M
V
N
2.54
4.50±0.20
O
P
6.80
2.60±0.20
Q
R
10°
H
S
25°
5°
T
U
0.5
V
2.60±0.15
G
J
B
A
W
W
℃
℃
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
SYMBOL
V
CEO(SUS)
I
CEO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(on)
f
T
TEST CONDITION
I
C
=-30mA, I
B
=0
V
CE
=-60V, I
B
=0
V
CE
=-100V, V
EB
=0
V
BE
=-5V, I
C
=0
V
CE
=-4V, I
C
=-1A
V
CE
=-4V, I
C
=-3A
I
C
=-3A, I
B
=-375mA
V
CE
=-4V, I
C
=-3A
V
CE
=-10V, I
C
=-500mA f=1MHz
MIN.
-100
-
-
-
25
10
-
-
3.0
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-
-0.3
-200
-1
-
50
-1.2
-1.8
-
V
V
MHz
UNIT
V
mA
μ
A
mA
2002. 6. 14
Revision No : 0
P
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
