SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
High Capacitance Ratio : C
1V
/C
4V
=1.8 (Min.)
Low Series Resistance. : r
S
=0.9
Good C-V Linearity.
2
L
KDV386S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
E
B
L
(Max.)
3
DIM
A
D
B
C
D
E
G
H
J
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
A
G
H
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
P
P
K
L
M
N
P
SYMBOL
V
R
T
j
T
stg
RATING
15
150
-55 150
UNIT
C
N
V
K
M
J
3
1. NC
2. ANODE
3. CATHODE
2
1
SOT-23
Marking
Lot No.
Type Name
VB
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Current
I
R2
C
1V
Capacitance
C
4V
Capacitance Ratio
Series Resistance
C
1V
/C
4V
r
S
V
R
=4V, f=1MHz
-
V
R
=5V, f=470MHz
18.5
1.8
-
-
-
-
25.5
-
0.9
-
V
R
=15V, Ta=60
V
R
=1V, f=1MHz
-
43.0
-
-
100
49.0
pF
SYMBOL
I
R1
V
R
=15V
TEST CONDITION
MIN.
-
TYP.
-
MAX.
10
nA
UNIT
2007. 10. 31
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
