SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
Low Series Resistance : r
s
=0.6 (Max.)
Small Package : ESC.
KDV355E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
High Capacitance Ratio : C
1V
/C
4V
=2.2(Min.)
C
1
E
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
15
150
-55 150
UNIT
V
1. ANODE
2. CATHODE
B
A
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_
1.20 + 0.10
_
+ 0.10
0.80
_
0.30 + 0.05
_
+ 0.10
0.60
_
0.13 + 0.05
ESC
Marking
Type Name
VA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Current
SYMBOL
I
R1
I
R2
C
1V
C
4V
C
1V
/C
4V
r
S
V
R
=15V
V
R
=15V, Ta=60
V
R
=1V, f=1MHz
V
R
=4V, f=1MHz
-
V
R
=1V, f=470MHz
TEST CONDITION
MIN.
-
-
6.40
2.55
2.2
-
TYP.
-
-
-
-
-
-
MAX.
10
100
7.20
2.95
-
0.6
UNIT
nA
Capacitance
Capacitance Ratio
Series Resistance
pF
2003. 10. 29
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
