KDV350
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO.
G
B
FEATURES
1
ᴌLow Series Resistance : rS=0.50ή(Max.)
ᴌSmall Package.
H
2
J
D
C
I
MAXIMUM RATING (Ta=25ᴱ)
DIM
A
CHARACTERISTIC
Reverse Voltage
SYMBOL
RATING
15
UNIT
V
MILLIMETERS
_
2.50+0.1
_
+
1.25 0.05
VR
Tj
B
C
D
E
_
+
0.90 0.05
0.30+0.06/-0.04
Junction Temperature
150
ᴱ
M
M
_
+
1.70 0.05
MIN 0.17
F
G
H
I
Tstg
Storage Temperature Range
-55ᴕ150
ᴱ
_
+
0.126 0.03
1. ANODE
0~0.1
1.0 MAX
_
+
0.15 0.05
2. CATHODE
J
_
K
L
M
0.4+0.05
2
+4/-2
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Reverse Voltage
SYMBOL
TEST CONDITION
MIN.
15
TYP.
MAX.
-
UNIT
V
VR
IR
IR=1ỌA
VR=15V
-
-
-
-
-
-
Reverse Current
-
10
nA
C1V
C4V
K
VR=1V, f=1MHz
VR=4V, f=1MHz
C1V/C4V, f=1MHz
VR=1V, f=470MHz
15.0
5.3
2.8
-
17.5
6.3
-
Capacitance
pF
Capacitance Ratio
Series Resistance
rS
0.5
ή
Marking
Type Name
U K
2001. 6. 11
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
