KDV310E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
TV Tuning.
FEATURES
C
E
High Capacitance Ratio : C2V/C25V=17.0(Min.)
Low Series Resistance : rs=1.1 (Max.)
Small Package : ESC.
1
2
D
F
MAXIMUM RATING (Ta=25
)
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+ 0.10
_
CHARACTERISTIC
Reverse Voltage
SYMBOL
RATING
34
UNIT
V
+
1.20 0.10
_
+
0.80 0.10
_
VR
Tj
+
0.30 0.05
_
+
0.60 0.10
Junction Temperature
Storage Temperature Range
150
1. ANODE
_
0.13+0.05
2. CATHODE
Tstg
-55 150
ESC
Marking
Type Name
V D
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
IR1
TEST CONDITION
MIN.
-
TYP.
MAX.
10
UNIT
VR=32V
-
-
-
-
-
-
Reverse Current
nA
pF
IR2
C2V
-
100
53.0
3.0
VR=32V, Ta=60
VR=2V, f=1MHz
VR=25V, f=1MHz
47.0
2.65
17.0
-
Capacitance
C25V
C2V/C25V
rS
Capacitance Ratio
Series Resistance
-
-
VR=5V, f=470MHz
1.1
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(VR=2~25V)
2004. 4. 20
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
