KDV273UL
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
TENTATIVE
High Capacitance Ratio : C1V/C4V =2.0(Typ.)
Low Series Resistance : rs=0.39 (Typ.)
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
A
SYMBOL
RATING
10
UNIT
V
DIM MILLIMETERS
VR
Tj
Reverse Voltage
B
_
1.0+0.05
A
B
C
D
E
_
+
0.6 0.05
Junction Temperature
Storage Temperature Range
150
0.36-+0.02
0.03
_
+
0.5 0.03
H
Tstg
-55 150
_
0.25 +0.03
_
G
H
0.65+0.03
E
E
0.05
G
H
D
1. ANODE
2. CATHODE
ULP-2
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
10
-
TYP.
-
MAX.
-
UNIT
V
IR=1 A
VR=10V
IR
C1V
C4V
K
Reverse Current
-
10
nA
VR=1V, f=1MHz
VR=4V, f=1MHz
15
7.3
1.8
-
16
17
Capacitance
pF
8.0
2.0
0.39
8.7
-
Capacitance Ratio
Series Resistance
-
rS
VR=1V, f=470MHz
0.5
Marking
Type Name
VB
2007. 5. 16
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
