SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
KDV251M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
FEATURES
Low Series Resistance : 0.6 (Max.)
High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
H
M
A
O
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
T
j
T
stg
RATING
12
150
UNIT
V
J
C
E
E
1
L
2
N
DIM MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
_
D
2.40 + 0.15
E
1.27
F
2.30
_
G
14.00+ 0.50
H
0.60 MAX
J
1.05
K
1.45
L
25
0.80
M
N
0.55 MAX
O
0.75
F
-55 150
1. ANODE
2. CATHODE
1
2
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
NONE
A
B
C
D
E
CAPACITANCE RATIO (C
1.6V
/C
5V
)
1.70
1.70
1.80
1.90
2.00
2.10
2.20
1.82
1.92
2.020
2.12
2
3
L
E
B
L
K
D
G
TO-92M
DIM
A
D
B
C
D
E
G
H
J
K
P
P
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
2.20
A
G
H
1
Grade
Lot No.
M
3
Type Name
Q3
1. NC
2. ANODE
3. CATHODE
2
1
K
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
Capacitance
Capacitance
Capacitance Ratio
Series Resistance
SYMBOL
V
R
I
R
C
1.6V
C
5V
C
1.6V
/C
5V
r
S
V
R
=1V, f=50MHz
TEST CONDITION
I
R
=10 A
V
R
=9V
V
R
=1.6V, f=1MHz
V
R
=5V, f=1MHz
MIN.
12
-
23
11
1.7
-
TYP.
-
-
-
-
-
-
MAX.
-
200
38
19
2.2
0.6
UNIT
V
nA
pF
pF
2002. 6. 25
Revision No : 4
J
Marking
C
N
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
