KDV257E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
C
E
ᴌLow Series Resistance : rs=0.50ή(Max.)
1
2
MAXIMUM RATING (Ta=25ᴱ)
D
CHARACTERISTIC
Reverse Voltage
SYMBOL
RATING
10
UNIT
V
F
VR
Tj
DIM MILLIMETERS
Junction Temperature
150
ᴱ
_
A
B
C
D
E
F
1.60+0.10
_
1.20+0.10
Tstg
Storage Temperature Range
-55ᴕ150
ᴱ
_
_
0.80+0.10
0.30+0.05
_
+
0.60 0.10
_
+
1. ANODE
2. CATHODE
0.13 0.05
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
Reverse Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VR
IR
IR=1ỌA
VR=10V
10
-
-
-
-
-
-
-
-
Reverse Current
10
nA
C1V
C2V
K
VR=1V, f=1MHz
VR=2V, f=1MHz
19.5
14.3
1.3
-
23.5
17.6
-
Capacitance
pF
Capacitance Ratio
Series Resistance
-
rS
VR=1V, f=470MHz
0.5
ή
Marking
Type Name
E A
2001. 6. 11
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
