KDV240E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR UHF Band Radio.
FEATURES
C
E
1
High Capacitance Ratio : C1V/C4V =2.1(Typ.)
Low Series Resistance : rs=0.28 (Typ.)
Useful for Small Size Tuner.
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+0.10
SYMBOL
RATING
10
UNIT
V
_
1.20+0.10
_
0.80+0.10
VR
Tj
Reverse Voltage
_
+
0.30 0.05
_
+
0.60 0.10
Junction Temperature
150
1. ANODE
_
+
0.13 0.05
2. CATHODE
Tstg
Storage Temperature Range
-55 150
ESC
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
IR=1 A
VR=10V
10
-
-
-
3
IR
C1V
C4V
K
Reverse Current
-
-
nA
VR=1V, f=1MHz
VR=4V, f=1MHz
C1V/C4V, f=1MHz
VR=1V, f=470MHz
9.7
4.45
1.8
-
11.1
5.45
-
Capacitance
pF
-
Capacitance Ratio
Series Resistance
2.1
0.28
rS
0.4
Marking
Type Name
E C
2003. 1. 27
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
