SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
FEATURES
Applicable to FM wide band due to high capacitance ratio.
Excellent C-V Characteristics.
Variations of Capacitance Values is Little.
A
KDV1480
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
L
E
B
L
G
Small Package.
2
3
1
P
P
C
Reverse Voltage
Junction Temperature
Storage Temperature Range
V
R
T
j
T
stg
16
150
-55 150
V
1. ANODE 1
2. ANODE 2
3. CATHODE
2
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
3
J
MAXIMUM RATING (Ta=25
)
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
N
H
D
1
SOT-23
Marking
Lot No.
Type Name
CA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Reverse Current
SYMBOL
V
R
I
R
C
3.0V
Capacitance
(Note1)
C
4.5V
C
6.0V
C
8.0V
Figure of merit
Capacitance Ratio
Note 1) Capacitance value of one diode.
Q
C
3.0V
/C
8.0V
I
R
=10 A
V
R
=10V
V
R
=3.0V, f=1MHz
V
R
=4.5V, f=1MHz
V
R
=6.0V, f=1MHz
V
R
=8.0V, f=1MHz
V
R
=3.0V, f=100MHz
-
TEST CONDITION
MIN.
16
-
36.92
27.45
19.91
12.77
60
2.50
TYP.
-
-
-
-
-
-
-
-
MAX.
-
50
43.03
32.80
25.61
16.84
-
3.00
pF
UNIT
V
nA
2004. 2. 12
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
