SEMICONDUCTOR
TECHNICAL DATA
For antenna switches in mobile applications.
FEATURES
Low Capacitance : C
T
=0.35[pF] (Max.)
Low Series resistance : r
S
=1.3[
Small Package : ESC
] (Max.)
2
KDV142V
SILICON EPITAXIAL PIN TYPE DIODE
CATHODE MARK
1
D
C
B
A
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
I
F
T
j
T
stg
RATING
30
100
150
-55 150
UNIT
F
E
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.4
+
0.05
_
1.0
+
0.05
_
0.6
+
0.05
_
0.28
+
0.03
_
0.5
+
0.05
_
0.12
+
0.03
V
mA
1. ANODE
2. CATHODE
VSC
Marking
CATHODE MARK
2
1
PA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Current
Forward Voltage
Total Capacitance
Series Resistance
SYMBOL
I
R
V
F
C
T
r
s
-
TEST CONDITION
V
R
=30V
I
F
=10mA
V
R
=1V, f=1MHz
I
F
=10mA, f=100MHz
C=200pF, R=0 ,
Both forward and reverse
direction 1 pulse
* Failure cirterion : I
R
>100nA at V
R
=30V.
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
0.1
1.0
0.35
1.3
UNIT
A
V
pF
ESD-Capability *
100
-
-
2006. 9. 8
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
