KDV1472
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
G
B
FEATURES
1
High Capacitance Ratio : C1V/C5V=5.0(Min.)
Excellent C-V Characteristics.
Variations of Capacitance Values is Little.
Small Package.
H
2
J
D
C
I
DIM
A
MILLIMETERS
_
2.50+0.1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
+
1.25 0.05
_
B
C
D
E
+
0.90 0.05
SYMBOL
RATING
16
UNIT
V
0.30+0.06/-0.04
_
M
M
+
1.70 0.05
VR
Tj
Reverse Voltage
MIN 0.17
_
F
G
H
I
+
0.126 0.03
Junction Temperature
Storage Temperature Range
150
1. ANODE
2. CATHODE
0~0.1
1.0 MAX
_
Tstg
-55 150
+
J
0.15 0.05
_
0.4+0.05
K
L
2
+4/-2
4~6
M
USC
CAPACITANCE(CIV)
30.16~33.63
GRADE
UNIT
pF
A
B
C
33.30~37.13
Marking
36.77~40.99
Grade
Type Name
B
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
TEST CONDITION
MIN.
16
TYP.
MAX.
-
UNIT
V
VR
IR
IR=10 A
VR=10V
-
-
Reverse Current
-
50
nA
C1V
C4.5V
K
VR=1V, f=1MHz
VR=4.5V, f=1MHz
C1V/C5V, f=1MHz
VR=1.5V, f=100MHz
30.16
6.2
5.0
-
35.60
7.7
-
40.99
9.2
-
Capacitance
pF
Capacitance Ratio
Series Resistance
rS
0.8
1.0
2002. 6. 25
Revision No : 2
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
