SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Low Forward Voltage : V
F
=1.0V (Max.).
Small Package : VSM.
2
KDS221V
SILICON EPITAXIAL PLANAR DIODE
E
B
1
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
20
20
200 *
100 *
300 *
100
150
-55 150
UNIT
V
V
mA
mA
mA
mW
C
P
P
DIM MILLIMETERS
_
A
1.2 +0.05
_
B
0.8 +0.05
_
C
0.5 + 0.05
_
0.3 + 0.05
D
_
1.2 + 0.05
E
_
G
0.8 + 0.05
H
0.40
_
J
0.12 + 0.05
_
K
0.2 + 0.05
P
5
A
G
H
K
J
D
3
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
2
1
VSM
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
Marking
DS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
SYMBOL
V
F
I
R
TEST CONDITION
I
F
=10mA
V
R
=15V
MIN.
-
-
TYP.
-
-
MAX.
1.0
0.1
UNIT
V
A
2003. 10. 28
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
