SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small package : TFSV.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
C
KDS166F
SILICON EPITAXIAL PLANAR DIODE
B
B1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
*
T
j
T
stg
1.5
RATING
85
80
300
100
2
100
150
-55 150
UNIT
V
H
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
* : Unit rating. Total rating=unit rating
DIM
A
A1
B
B1
C
D
H
T
MILLIMETERS
_
1.0 + 0.05
_ 0.05
0.7 +
_
1.0 + 0.05
_
+ 0.05
0.8
0.35
_
0.15 + 0.05
0.38+0.02/-0.04
_
0.1 + 0.05
A1
C
A
D
V
mA
mA
A
mW
T
1. ANODE 1
2. N.C
3. ANODE 2
4. CATHODE 2
5. CATHODE 1
TFSV
Marking
5
4
Lot No.
SC
1
2
3
D1
D2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0V, f=1MHz
I
F
=10mA
TEST CONDITION
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
A
pF
ns
V
UNIT
2006. 1. 13
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
