SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESM.
Low Forward Voltage : V
F
=1.0V (Max.).
2
E
KDS142E
SILICON EPITAXIAL PLANAR DIODE
B
D
3
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
A
G
1
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
20
20
200 *
100 *
300 *
100
150
-55 150
UNIT
V
V
mA
mA
mA
mW
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
2
1
3
C
MAXIMUM RATING (Ta=25
)
H
J
ESM
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
Marking
DS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Forward Voltage
Reverse Current
SYMBOL
V
F
I
R
TEST CONDITION
I
F
=10mA
V
R
=15V
MIN.
-
-
TYP.
-
-
MAX.
1.0
0.1
UNIT
V
A
2003. 1. 27
Revision No : 0
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
