SEMICONDUCTOR
KDS127E
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
B
B1
FEATURES
Low Forward Voltage
Fast Reverse Recovery Time
Small Total Capacitance
Ultra- Small Surface Mount Package
1
2
3
6
5
DIM MILLIMETERS
_
A
A1
B
1.6+0.05
_
1.0+0.05
_
1.6+0.05
_
B1
C
1.2+0.05
0.50
4
_
D
H
J
0.2+0.05
_
0.5+0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
0.12+0.05
P
P
P
5
SYMBOL
VRM
VR
RATING
80
UNIT
V
Maximum (Peak) Reverse Voltage
Reverse Voltage
80
V
IFM
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
300 *
100 *
2 *
mA
mA
A
1. D1 ANODE
2. D2 CATHODE
3. D3/D4 ANODE/CATHODE
4. D3 ANODE
5. D4 CATHODE
IO
IFSM
PD
6. D1/D2 ANODE/CATHODE
Power Dissipation
200**
150
mW
Tj
Junction Temperature
TES6
Tstg
Storage Temperature Range
-55 150
* Where D1, D2, D3, D4 are used independently or simultaneously,
the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
Type Name
4
6
5
6
1
5
4
D4
D3
U S
D1
D2
2
3
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
IF=100mA
MIN.
TYP.
MAX.
1.2
UNIT
VF
IR
-
-
-
-
-
-
V
VR=80V
Reverse Current
0.1
A
CT
VR=6V, f=1MHz
Total Capacitance
3.5
pF
2007. 10. 31
Revision No : 0
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
