SEMICONDUCTOR
KDS123E
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
E
B
Low Forward Voltage
MILLIMETERS
1.60+0.10
DIM
A
Fast Reverse Recovery Time
Small Total Capacitance
Ultra- Small Surface Mount Package
_
D
_
+
2
1
B
0.85 0.10
_
C
0.70+0.10
3
D
E
G
H
J
0.27+0.10/-0.05
_
1.60+0.10
_
1.00+0.10
0.50
_
0.13 0.05
+
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
J
SYMBOL RATING
UNIT
V
3
VRM
VR
IFM
IO
Maximum (Peak) Reverse Voltage
Reverse Voltage
80
80
1. CATHODE 2
2. ANODE 1
D1
2
D2
V
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
300*
100*
2*
mA
mA
A
3. ANODE 2 / CATHODE 1
1
IFSM
PD
Power Dissipation
100
mW
ESM
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55 150
* Unit Rating. Total Rating=Unit Rating 0.7
Marking
Type Name
U S
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
1.2
UNIT
V
VF
IR
IF=100mA
VR=80V
VR=6V, f=1MHz
-
-
-
-
-
-
Reverse Current
0.1
A
CT
Total Capacitance
3.5
pF
2007. 10. 31
Revision No : 0
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
