SEMICONDUCTOR
KDS127U
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
B
B1
· Low Forward Voltage
· Fast Reverse Recovery Time
· Small Total Capacitance
· Ultra- Small Surface Mount Package
DIM MILLIMETERS
1
2
3
6
5
4
_
A
A1
B
2.00+0.20
_
1.3+0.1
_
2.1+0.1
_
D
B1
C
1.25+0.1
0.65
0.2+0.10/-0.05
0-0.1
D
G
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
_
H
T
0.9+0.1
SYMBOL
VRM
VR
RATING
80
UNIT
V
0.15+0.1/-0.05
T
Maximum (Peak) Reverse Voltage
Reverse Voltage
G
80
V
1. D1 ANODE
2. D2 CATHODE
IFM
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
300 *
100 *
2 *
mA
mA
A
3. D3/D4 ANODE/CATHODE
4. D3 ANODE
IO
5. D4 CATHODE
IFSM
PD
6. D1/D2 ANODE/CATHODE
Power Dissipation
200**
150
mW
℃
Tj
Junction Temperature
US6
Tstg
Storage Temperature Range
-55∼ 150
℃
* Where D1, D2, D3, D4 are used independently or simultaneously,
the Maximum Ratings per diode are 50% of those of the single diode.
** Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
4
6
5
Lot No.
6
1
5
4
D4
D3
Type Name
S7
D1
D2
2
3
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Forward Voltage
SYMBOL
TEST CONDITION
IF=100mA
MIN.
TYP.
MAX.
1.2
UNIT
V
VF
IR
-
-
-
-
-
-
VR=80V
Reverse Current
0.1
μA
CT
VR=6V, f=1MHz
Total Capacitance
3.5
pF
2008. 9. 11
Revision No : 1
1/3
KEC [ KEC(KOREA ELECTRONICS) ]
