SEMICONDUCTOR
MARKING SPECIFICATION
KDS112
USM PACKAGE
1. Marking method
Laser Marking
2. Marking
1
2
BF
No.
Item
Marking
Description
Device Mark
hFE Grade
BF
-
KDS112
-
①
②
2006. 1st Week
[0:1st Character, 1:2nd Character]
* Lot No.
01
Note) * Lot No. marking method
1
(A)
2
(B)
3
(C)
4
(D)
5
(E)
6
(F)
7
(G)
8
(H)
9
(I)
0
(J)
1 st Character
Character
arrangement
A
(1)
B
(2)
C
(3)
D
(4)
E
(5)
F
(6)
G
(7)
H
(8)
I
(9)
J
(0)
2nd Character
Year
Marking (Week)
Periode (Year)
Remark
1 st Year (2006)
2 nd Year (2007)
3 rd Year (2008)
4 th Year (2009)
01
0A
J1
02
51
52
5B
E2
EB
2006-2010-2014...
2007-2011-2015...
2008-2012-2016...
2009-2013-2017...
…
…
…
…
0B
J2
5A
E1
Rotation for 4 years
JA
JB
EA
2008. 9. 8
Revision No : 0
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