SEMICONDUCTOR
KDR784
SCHOTTKY BARRIER TYPE DIODE
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
G
B
1
FEATURES
Low Forward Voltage : VF(3)=0.42V(Typ.)
Small Package : USC.
H
2
J
D
C
I
DIM
A
MILLIMETERS
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
2.50+0.1
_
+
1.25 0.05
_
B
C
D
E
SYMBOL RATING
UNIT
V
+
0.90 0.05
0.30+0.06/-0.04
_
VRM
VR
IFM
IO
Maximum (Peak) Reverse Voltage
Reverse Voltage
30
30
M
M
+
1.70 0.05
MIN 0.17
_
F
G
H
I
V
+
0.126 0.03
1. ANODE
0~0.1
1.0 MAX
_
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
300
mA
mA
A
2. CATHODE
+
J
0.15 0.05
100
_
0.4+0.05
K
L
2
+4/-2
4~6
IFSM
PD
1
M
Power Dissipation
200*
125
mW
USC
Tj
Junction Temperature
Tstg
Storage Temperature Range
-55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Marking
Type Name
U U
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
VF(1)
VF(2)
VF(3)
IR
TEST CONDITION
MIN.
TYP.
0.26
0.30
0.42
-
MAX.
0.35
0.40
0.55
15
UNIT
V
IF=1mA
IF=5mA
-
-
-
-
-
Forward Voltage
IF=100mA
VR=30V
Reverse Current
A
CT
VR=1V, f=1MHz
Total Capacitance
40
-
pF
2003. 2. 25
Revision No : 2
1/1
KEC [ KEC(KOREA ELECTRONICS) ]