KDR732E
SEMICONDUCTOR
SCHOTTKY BARRIER TYPE DIODE
(TWIN TYPE, CATHODE COMMON)
TECHNICAL DATA
HIGH SPEED RECTIFICATION
(SWITCHING REGULATORS, CONVERTERS, CHOPPERS)
UNIVERSAL-USE RECTIFIERS.
E
B
MILLIMETERS
_
DIM
A
+
1.60 0.10
D
_
+
0.85 0.10
FEATURES
2
1
B
_
+
0.70 0.10
C
D
E
Low Forward Voltage : VF max=0.55V
Fast reverse recovery time (trr max=10nS)
Low switching noise.
3
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
G
H
0.50
_
0.13+0.05
J
Low leakage current and high reliablility due to
Highly reliable planar structure.
J
Ultrasmall-sized package permtting KDR732
applied sets to be made small and slim.
3
1. ANODE 1
2. ANODE 2
3. CATHODE
2
1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
VRRM
RATING
30
UNIT
V
Repetitive (Peak) Reverse Voltage
ESM
Non-Repetitive (Peak)
Reverse Surge Voltage
VRSM
35
V
IO
IFSM
Tj
Average Forward Current
Surge Forward Current
Junction Temperature
70
2
mA
A
125
Marking
Tstg
Storage Temperature Range
-55 125
U Z
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VR
VF
IR
IR=20 A
IF=70mA
VR=15V
30
-
-
-
-
0.55
5
Forward Voltage
V
Reverse Current
-
-
A
CT
trr
VR=10V, f=1MHz
IR=IF=10mA
Total Capacitance
Reverse Recovery Time
-
3.0
-
-
pF
nS
-
10
2003. 2. 25
Revision No : 1
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
