SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
KDR582E
SCHOTTKY BARRIER TYPE DIODE
FEATURES
Low reverse current, low capacitance.
Small package : ESC.
CATHODE MARK
C
1
E
2
D
F
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
R
V
R
I
F
P
D
*
T
j
T
stg
RATING
4
4
130
150
150
-55 150
UNIT
V
V
mA
mW
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_ 0.10
1.20 +
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
B
* Mounted on a glass epoxy circuit board of 20 20
, Pad Dimension of 4 4
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
I
F
=0.1mA
Forward Voltage
V
F
I
F
=1mA
I
F
=10mA
Reverse Current
Total Capacitance
Series Resistance
I
R
C
T
r
S
V
R
=3V
V
R
=3V, T
A
=60
V
R
=0V, f=1MHz
I
F
=5mA, f=10kHz
MIN.
0.2
0.25
0.35
-
-
0.4
-
TYP.
-
-
-
-
-
-
-
MAX.
0.35
0.45
0.6
0.25
1.25
0.75
15
A
pF
V
UNIT
2006. 11. 23
Revision No : 0
A
ESC
S4
1/2
KEC [ KEC(KOREA ELECTRONICS) ]
